Embedded DDR Cabling Analysis DDR Signal Cabling Introduction

Embedded DDR (Double Data Rate) design is the most important and core part of embedded hardware design with DDR. As the processing capability of embedded systems becomes more and more powerful, more and more functions are implemented, and the operating frequency of the system is getting higher and higher, the operating frequency of DDR is gradually increased from the lowest 133 MHz to 200 MHz, thereby realizing even more. Big system bandwidth and better performance. However, the higher operating frequency also imposes higher requirements on the stability of the system. This requires hardware designers to have more constraints and considerations on the layout of the circuit. The most important part that can affect whether the whole system works normally and is stable is the circuit design of the DDR part.

Embedded systems use DDR memory to achieve better performance on traditional single-data-rate memory chips. DDR allows two operations to be processed within one clock cycle without increasing clock frequency and data width. The increased data bus performance is due to the source synchronous data strobe allowing data to be simultaneously acquired on both the rising and falling edges of the strobe pulse.

Although DDR can bring better performance to embedded designs, designers must deal with the PCB layout part of DDR more carefully than previous SDR designs. Otherwise, not only can they not achieve good performance, but also the stability of the entire embedded system. It will also be affected. DDR has shorter signal setup hold times, cleaner reference voltages, tighter trace matching, and new I/O port signals than conventional SDRs, and requires proper termination resistor matching. These are new challenges to face.

1 DDR bus structure

For DDR memory, JEDEC established and adopted a low-voltage, high-speed signal standard. This standard is called "StubSeries Terminated Logic (SSTL)." The SSTL can improve the signal integrity of data transmitted over the bus. The purpose of this terminal design is to prevent data corruption due to signal reflections at high speeds.

In a typical memory topology, if a series resistor (RS) is used, it should be placed away from the DDR controller. This approach saves valuable board space near the controller, avoids cabling congestion and cumbersome fanout; it also optimizes the signal integrity from the controller to the memory chip, often with many address and command signals in these locations. Need to be reliably received by multiple memories.

The most common SSTL terminal model is a better single terminal and parallel terminal scheme, as shown in Figure 1. This scheme involves using a series termination resistor (Rs) from the controller to the memory, and a parallel termination resistor (RT) pulled up to the termination voltage (VTT). This method is common on motherboards of commercial computers, but current embedded motherboards are often used for better signal integrity and system stability. The RS and RT values ​​depend on the specific system and should be determined by board-level simulations.

Embedded DDR Cabling Analysis DDR Signal Cabling Introduction

2 Embedded DDR Cabling Analysis

2.1 DDR Signal Integrity Issues

Transmission of high-speed bus signals often requires consideration of signal integrity issues. The signal line of the DDR is not an ordinary signal line but a transmission line. Therefore, the via holes on the transmission line, or the discontinuous impedance factors such as the connector, all affect the signal integrity at the receiving end. There are overshoots and undershoots, ringing, and crosstalk effects. Some inaccuracies in AC noise and DC voltage also affect signal transmission performance.

DDR To achieve a higher signal frequency, the received level of the SSTL high-gain differential receiver is often biased near the reference level (VREF), using such a receiver allows a smaller voltage swing, less signal reflection , lower electromagnetic interference and shorter settling time, can adapt to higher clock frequency than LVTTL. Figure 2 shows the SSTL interface level. The AC logic level is the receiver level at the receiver, where the AC logic parameters (including setup and hold times) must be optimal at the receiver, and the DC logic level provides a lagging reception level point. When the input level passes through the DC DC reference point, the receiver transitions to a new logic level and maintains this new state as long as the signal is not below the threshold level. Therefore, the SSTL bus is not susceptible to overshoot, undershoot, and ringing.

Embedded DDR Cabling Analysis DDR Signal Cabling Introduction

2.2 DDR Signal Grouping Based on Cabling Considerations

The DDR controller includes more than 130 signals and provides a direct signal interface to the memory subsystem. These signals can be divided into different signal groups according to the type of signal, as listed in Table 1.

Embedded DDR Cabling Analysis DDR Signal Cabling Introduction

Among them, the grouping of the data group should be divided by each byte channel, DM0, DQS0 and DQ0-DQ7 are the 1st byte channel, DM1, DQS1 and DQ8-DQ15 are the 2nd byte channel, and so on. There is a strict length matching relationship within each byte lane. The length of other signal traces should be matched in units of groups. The difference in signal length in each group should be strictly controlled within a certain range. Although the signals of different groups are not as stringent as the intra-group signals, the differences in lengths of different groups also have certain requirements. For detailed wiring requirements, see section 2.4.

2.3 Signal Group Wiring Order

To ensure that the DDR interface is optimized, the DDR routing should be performed in the following order: power, pin swapping in a resistive network, data signal line routing, address/command signal routing, control signal routing, clock signal routing, and feedback signal routing.

The routing priority of the data signal group is the highest among all signal groups because it operates at twice the clock frequency and its signal integrity requirements are the highest. In addition, the data signal group is the portion of the memory bus that occupies the largest portion of all of these signal groups, and is the most important signal group that matches the required length of the trace.

Address, command, control, and data signal groups are all related to the clock traces. Therefore, the effective clock trace length in the system should satisfy multiple relationships. Designers should establish a comprehensive consideration of system timing to ensure that all these relationships are met.

2.4 Matching Signal Wiring Length of Each Group

Clock signal: referenced to the ground plane to provide a complete ground plane for the entire clock loop trace, providing a low impedance path to the loop current. Because it is a differential clock signal, the line width should be designed in advance before wiring, and the differential impedance is calculated. Then, the wiring is performed according to this constraint. All DDR differential clock signals must be routed on the critical plane to avoid layer-to-layer transitions. The line width and differential spacing need to refer to the DDR controller's implementation details. The single line impedance of the signal line should be controlled at 50-60 Ω, and the differential impedance should be controlled at 100-120 Ω. Clock signals to other signals should be kept at a distance of 20 mil* or more to prevent interference with other signals. The serpentine trace spacing should not be less than 20 mils. The series termination resistor RS value is in the range of 15 to 33Ω, and the optional parallel termination resistor RT is in the range of 25 to 68Ω. The specific resistance value should be based on the signal integrity simulation result.

Data signal group: reference to the ground plane to provide a complete ground plane for the signal loop. The characteristic impedance is controlled at 50 to 60 Ω. Line width requirements refer to the implementation rules. Is at least 20 mils away from other non-DDR signals. The length matching is set in units of byte channels. The length difference of the data signal DQ, data strobe DQS and data mask signal DM in each byte channel should be controlled within ±25 mils (very important), and the signal length of different byte channels. The difference should be controlled within 1 000 mils. The matched DM and DQS series matching resistors have an RS value of 0 to 33 Ω, and the parallel matching termination resistor RT has a value of 25 to 68 Ω. If matching using a resistor bank, there should be no other DDR signal in the data resistor bank.

Address and command signal groups: Keep the ground and power planes intact. The characteristic impedance is controlled at 50 to 60 Ω. The signal line width refers to the specific design implementation details. The distance between signal groups and other non-DDR signals is kept at least 20 mils. The in-group signal should match the DDR clock line length, with a gap of at least 25 mils. The series matching resistor RS is O~33 Ω, and the parallel matching resistor RT should be 25~68 Ω. The signals in this group should not be in the same resistor row as the data signals.

Control signal group: The control signal group has the least signal, only the clock enable and chip select two signals. Still need a complete ground plane and power plane for reference. The series matching resistor RS is O~33 Ω, and the parallel matching termination resistor RT is 25~68 Ω. In order to prevent crosstalk, the signals in this group also cannot be in the same resistor row as the data signals.

2.5 Design Analysis of Power Supply Section

Under normal circumstances, the DDR supply voltage is 2.3 to 2.7 V, and the typical value is 2.5 V. Different operating frequencies may cause different operating voltages. The reference voltage VREF is 1.13 to 1.38 V, and the typical value is 1.25 V. VTT is referenced to VREF and has a voltage range of (VREF-0.4 V)-(VREF+0.4 V). Since VREF only supplies a DC reference level to the differential receiver, the current is relatively small, only 3 mA at maximum. VTT current due to the pull-up, in the output terminal output high, VTT should be able to flow into the current; output at the output of low VTT current output. Therefore, VTT must have both inflow and outflow currents. The magnitude of the current depends on the state of the potential on the bus at the same time. From a common design, the maximum value can be from 2.3 A to 3.2 A.

Since the VREF voltage is an important reference for other signal receivers, its wiring design is also very important. Crosstalk or noise superimposed on the VREF voltage can directly cause potential timing errors, jitter, and drift on the memory bus. Many power chips will output VREF and VTT from the same source, but the traces are completely different due to different purposes. VREF is preferably in a different plane than VTT to avoid VTT-generated noise interfering with VREF. In addition, no matter the DDR controller or DDR memory, decoupling capacitors should be placed near the VREF pin to eliminate high-frequency noise. The width of the VREF trace should be as wide as possible, preferably 20 to 25 mils.

The VTT power supply should be divided into a single plane to supply current, and it is best to put it on the DDR memory side. If the parallel terminations match the pull-up method using pull-out, it is best to add a decoupling capacitor of 0.1 μF or 0.01 μF for each resistor, which is good for improving the integrity of the signal and improving the stability of the DDR bus. Effect.

Conclusion

In embedded system boards with DDR, the most difficult part of designing a PCB is the DDR trace design. A good trace is equivalent to good signal integrity and good timing matching. The bus will not go wrong during high-speed input/output data and can even have better crosstalk and EMC immunity. The DDR bus transmits in parallel and has a relatively high speed. If the wiring is not performed according to strict constraints during the design process, various abnormal problems will occur during the device's later debugging process, and even the system cannot be started at all. These problems are hard to find in finding and debugging, so that it is impossible to complete the hardware development. The best way is to fully consider the issue of signal integrity and timing matching in designing. Apply these rules when wiring. If there are conditions, you can do some simulation and verify the design in advance. With this design, the stability and reliability of the system will be even higher.

Cutting Die

Etching cutting die is mainly used in the die-cutting industry to cut product labels. Generally applied to trademarks, printing and packaging, various paper art, fabric creation, home beautification, office decoration, double-sided adhesive, single-sided adhesive, stickers and more.
The main characteristics of the die cuts are that it has no jointing, high precision and a higher service life than laser cutting dies. The size of the product is stable during the die-cutting process, the maintenance requirements are simple during the storage of the moulds, and long-term storage will not affect the size of the product.
We customize diverse patterns Mould products with drawings provided by customers. We are equipped with professional metal etching equipment and exposure development equipment. The accuracy of our moulds can be maintained at ±0.05mm, the material uses is high hardness 65 Mn Steel. We can guarantee that our hard mould cutting die have straight blade lines, consistent width and height, as well as the blade height and bottom thickness accuracy also meet the customer's requirements.

Hard Mould Cutting Die,Diverse Patterns Mould, High Hardness 65 Mn Steel,Die cuts

SHAOXING HUALI ELECTRONICS CO., LTD. , https://www.cnsxhuali.com