It is reported that Mitsubishi Chemical plans to mass-produce gallium nitride (GaN) substrates for LEDs in October this year. Because of its high electro-optical conversion rate (the efficiency of converting electricity into light), the LED lighting consumption of the GaN substrate is consumed. Electricity can be cut by 50-70% compared to current products.

Mitsubishi Chemical has invested about 500 million yen to build a substrate processing line in the Mizushima Plant. It is expected to be completed in April this year. Substrate samples will be shipped in July and will be mass-produced in October. The GaN substrate has a monthly output of 500 pieces (available for 100,000 LED bulbs).

In addition, Mitsubishi Chemical plans to significantly double the monthly capacity of GaN substrates to 6,000 pieces (converted by 2 inch diameter products; the same below) in 2013, and plans to further expand to 30,000 pieces in 2015 to take this one. The tone is in the industry standard and it is estimated that Mitsubishi Chemical's total investment in GaN substrates will reach tens of billions of yen. Compared with the current mainstream sapphire substrate, GaN substrate has the advantages of low power loss, but the biggest problem is that the production cost is too high. However, since Mitsubishi Chemical has established high-efficiency production technology, Mitsubishi Chemical Analysis is in the medium and long term. Its cost side should be able to counter the sapphire substrate.

 

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