TESTBASE-ARP — Advanced General Purpose Vehicle ECU R&D Platform

Overview

The Advanced Rapid Control Prototype (ARP) product provides users with a general vehicle-mounted ECU R&D platform, including hardware, basic software and related toolkits. Users can quickly verify the feasibility of their upper-level algorithms or schemes on this platform, and prepare for subsequent further research and development or mass production.



product description

? Resources Introduction

? Use Infineon's TC2XX series as the main processor, faster processing speed, rich on-chip resources, and meet multi-core and functional safety hardware solutions

? Meet the needs of high-end control algorithm development such as advanced gateways and domain controllers

? Provide rich CAN/CanFD, LIN and ETH bus communication interfaces

? Dedicated charging CP interface reserved for charging national standard

? Integrated power management, output diagnostic functions, safer and more reliable to use


Flexible, easy-to-use development integrated environment


? An Introduction

? Ethernet-based refresh tool

? Provide Simulink package library, which is more convenient to integrate with Matlab

? Calibration tool based on Ethernet and XCP

? Provide drive software configuration tools, convenient for users to use

? Basic software library that complies with AUTOSAR specifications


Service Content

? Technical Training

? Technical Support

? consultation service

feature of product

? Abundant resources

? Convenient configuration

? Support calibration and refresh

Supported bus

? CAN/CANFD bus

? LIN bus

? Ethernet bus


? Application area


Applied to domain controllers, ADAS, smart gateways, etc.


Hengrun Technology, 6th Floor, Block D, Zhizhen Building, No. 7 Zhichun Road, Haidian District, Beijing
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Fast Recovery Stud Diode

Fast Recovery Diode (FRD) is a semiconductor diode with good switching characteristics and short reverse recovery time. It is mainly used in switching power supplies, PWM pulse width modulators, inverters and other electronic circuits as high-frequency rectifier diodes. Free-wheeling or damper diodes are used. The internal structure of the fast recovery diode is different from that of an ordinary PN junction diode. It belongs to a PIN junction diode, that is, a base region I is added between the P-type silicon material and the N-type silicon material to form a PIN silicon wafer. Since the base area is thin and the reverse recovery charge is small, the fast recovery diode has a short reverse recovery time, a low forward voltage drop, and a high reverse breakdown voltage (withstanding voltage).

Fast Recovery Stud Diode

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